Method and composition for improving LWR in patterning step using negative tone photoresist

ABSTRACT

The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.

TECHNICAL FIELD

The present invention relates to a method and composition for reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor.

BACKGROUND ART

With the recent trends toward miniaturization and integration of semiconductor devices, a fine pattern is required. In the formation of such a fine pattern, increasing the fineness of a photoresist pattern through the development of an exposure apparatus or the introduction of an additional process is regarded as efficient.

During the fabrication of a semiconductor in the past, a pattern has conventionally been formed on a semiconductor substrate using an i-line light source at a wavelength of 365 nm, but a light source in a smaller wavelength band is necessary in order to form a finer pattern.

A lithography technique using KrF (248 nm), ArF (198 nm) and EUV (Extreme Ultra Violet, 13.5 nm) light sources has been developed and has been commercialized or is currently being commercialized for real-world application, making it possible to realize a finer wavelength. However, as the pattern becomes finer (tens of nm), there occurs a problem in that the processing margin in the fabrication process is decreased owing to the roughness (LWR, line width roughness) of the formed pattern side wall, which is not a problem when the pattern is relatively large (hundreds of nm).

The formation of a photoresist pattern includes a positive tone development process for forming a pattern using an alkaline developing solution and a negative tone development process for forming a pattern using an organic solvent. The process of forming a pattern using a positive tone developing solution includes selectively dissolving and removing the exposed region of a photoresist film using an alkaline developing solution, and the process of forming a pattern using a negative tone developing solution facilitates the pattern formation and removes the unexposed portion and is thus more effectively able to form a photoresist pattern, compared to pattern formation using the positive tone developing solution.

Although the resolution and LWR of the negative photoresist process are better than those of the typical positive photoresist process, it is necessary to further reduce the LWR of the photoresist in order to ensure a processing margin, which is deteriorated due to the increased fineness of the pattern. With the goal of reducing LWR, many attempts have been made to improve the structure of a polymer or reduce the molecular weight of a polymer, among the constituents of the existing photoresist, or to increase the sensitivity of the photoresist to light, but a complete solution has yet to be found.

Meanwhile, thorough work has been carried out to realize a finer pattern through research into the development of a novel process, and there is demand to develop a technique for ensuring pattern uniformity by reducing the LWR of the photoresist pattern.

DISCLOSURE Technical Problem

Accordingly, the present invention is intended to provide a composition for reducing the LWR of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and a processing method using the composition.

Technical Solution

Therefore, a preferred embodiment of the present invention provides a processing solution composition for reducing the LWR of a photoresist pattern, comprising 1 to 99.999 wt % of a swelling material for swelling a photoresist pattern, 0.001 to 2 wt % of an alkaline material for developing an unexposed pattern surface, 0 to 98.999 wt % of a solvent enabling material dissolution and mixing, and a 0 to 2 wt % of a surfactant.

In the above embodiment, the swelling material for swelling a photoresist pattern may be selected from the group consisting of C1-C5 alcohols and alcohol derivatives, such as methanol, ethanol, 2-butoxy ethanol, N-propanol, 2-propanol, 1-butoxy-2-propanol, 2-methyl-2-propanol, 1-butanol, 2-butanol, 2-methyl-2-butanol, 3-methyl-1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, 2-methyl-1-pentanol, 2-methyl-3-pentanol, 2,3-dimethyl-3-pentanol and 4-methyl-2-pentanol, amide-based solvents, such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide and 1,3-dimethyl-2-imidazolidinone, ketone-based solvents, such as 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 1-hexanone, 2-hexanone, 4-heptanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, methyl ethyl ketone, methyl isobutyl ketone, diacetonyl alcohol and acetyl carbitol, ether-based solvents, such as ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, monomethylether, methoxymethyl butanol, diethylether, ethylene glycol monomethylether, propylene glycol monomethylether, propylene glycol monoethylether, diethylene glycol monomethylether and triethylene glycol monoethylether, ester-based solvents, such as propylene glycol monomethylether acetate, ethylene glycol monoethylether acetate, diethylene glycol monobutylether acetate and diethylene glycol monoethylether acetate, hydrocarbon-based solvents, such as pentane, hexane, octane and decane, and mixtures thereof.

In the above embodiment, the alkaline material is not particularly limited, so long as it is amines in which a metal ion is not substituted. The alkaline material may be selected from the group consisting of primary amines, such as ethylamine and n-propylamine, secondary amines, such as diethylamine, dipropylamine, dibutylamine, diphenylamine, diisopropylamine and di-n-butylamine, tertiary amines, such as triethylamine, tributylamine, tripropylamine, trioctylamine and methyldiethylamine, quaternary ammonium hydroxides, such as tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide and tetrapentyl ammonium hydroxide, and mixtures thereof.

In the above embodiment, the solvent is not particularly limited, so long as it does not dissolve a resist pattern, and a solution including a typical organic solvent may be used. The solvent may be selected from the group consisting of monohydric alcohols, such as 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-octanol and 4-octanol, ester-based solvents, such as butyl acetate, amyl acetate, ethyl-3-ethoxypropionate, 3-methoxybutylacetate, 3-methyl-3-methoxybutylacetate, butyl formate, propyl formate, ethyl lactate and butyl lactate, and mixtures thereof.

In the above embodiment, the surfactant may be a nonionic surfactant.

In the above embodiment, the nonionic surfactant may be selected from the group consisting of polyoxyethylene alkylethers, polyoxyethylene alkylphenylethers, polyoxyethylene nonylphenylethers, polyoxyethylene octylphenylethers, polyoxyethylene polyoxypropylenes, polyoxyethylene laurylethers, polyoxyethylene sorbitans, and mixtures thereof.

Another preferred embodiment of the present invention provides a processing method for reducing the LWR of a pattern, comprising continuously subjecting the composition prepared under the above conditions to 1) dispensing in a predetermined amount, 2) puddling for a predetermined period of time and then 3) spin drying, after a negative tone photoresist development process.

Patterning with a negative tone photoresist includes coating with a photoresist solution, soft-baking, exposure, post-exposure baking (PEB), and development with each developing solution, which is the same procedure as in a typical positive photoresist process. Subsequently, in the process using a positive photoresist, water rinsing is finally performed to remove the developing solution and the development residue, whereas in the process using a negative tone photoresist, since water and the developing solution cannot be mixed and thus water rinsing is impossible, additional developing solution is used in lieu of the water-rinsing step, or a rinse liquid in the form of an organic solvent usable in lieu of water is used to remove residue, as disclosed in Korean Patent (Application Publication No. 10-2014-0103187).

Korean Patent (Application Publication No. 10-2014-0103187) discloses a negative tone photoresist cleaning method, in which an organic solvent-type rinse liquid having the same function as the rinse using water in a positive photoresist process is used to remove residue, and an organic solvent, which neither dissolves nor swells a pattern, is selectively used and cleaning is performed through any one process selected from among spin coating, dipping, and spraying, thus removing residue that may be left behind after a development process, whereas in the present invention, the pattern is finely swollen using the swelling material and the alkaline material penetrates deeply into the swollen pattern, whereby a portion of the unexposed surface of the pattern is trimmed to thus reduce LWR.

As for the treatment process, in the above-cited reference, the spin-coating process is performed in a manner in which the liquid is dispensed while the wafer to be cleaned is continuously rotated, without a puddle process, but in the present invention, it is essential to fix and puddle (in a semiconductor process) the wafer in order to swell the pattern.

Advantageous Effects

According to the present invention, a composition for reducing the LWR of a negative tone photoresist pattern and a process of reducing LWR using the composition enable fine swelling of a photoresist pattern and trimming of an unexposed surface using an alkaline material to thus reduce the LWR (Line Width Roughness) of the pattern, whereby a depth of focus (DoF) margin and an energy margin (EL margin) can increase, thus improving the overall processing margin of semiconductor fabrication and remarkably decreasing the defect rates of products.

BRIEF DESCRIPTION OF DRAWING

FIG. 1 shows scanning electron microscopy images of photoresist patterns of Comparative Test Example 1 and Test Example 7.

BEST MODE

Hereinafter, a detailed description will be given of the present invention.

The present invention pertains to a composition for pattern treatment and a processing method for reducing the LWR of a pattern in a negative tone photoresist patterning process.

In the present invention, the composition for pattern treatment comprises 1 to 99.999 wt % of a swelling material for swelling a photoresist pattern, 0.001 to 2 wt % of an alkaline material for developing an unexposed pattern surface, 0 to 98.999 wt % of a solvent, and 0 to 2 wt % of a surfactant.

In the present invention, the processing method includes dispensing at a speed of 5 to 50 mL/s for 1 to 20 sec, puddling for 10 to less than 90 sec, and spin drying.

Typically, the rough portion of the side wall of the pattern, which causes pattern LWR defects, may be trimmed by appropriately using the physical and chemical properties of photoresist constituents for use in the formation of a fine pattern during the fabrication of a semiconductor. Specifically, in the development process, a chemical material suitable for the physical and chemical states of the rough portion of the side wall of the pattern is used, whereby the protruding portion and the considerably recessed portion may be corrected.

In the negative tone photoresist, the size of the pattern, in which the hydrophilic photoresist remains due to excessively diffused acid, is larger by LWR variation than the fully developed pattern.

According to the present invention, the processing solution composition for reducing LWR enables the relatively small developed pattern portion to be swollen to a desired size based on the pattern size of the portion that is enlarged beyond the original pattern size due to the acid diffusion upon exposure, and also enables a portion of the swollen pattern surface to be finely removed using the alkaline material to thus trim the pattern, whereby the pattern size may be adjusted, thus realizing LWR reduction.

The swelling material may include at least one selected from among an alcohol and alcohol derivative, an amide-based solvent, a ketone-based solvent, an ether-based solvent, an ester-based solvent and a hydrocarbon-based solvent.

Specific examples of the alcohol and alcohol derivative may include C1-C5 alcohols and alcohol derivatives, such as methanol, ethanol, 2-butoxy ethanol, N-propanol, 2-propanol, 1-butoxy-2-propanol, 2-methyl-2-propanol, 1-butanol, 2-butanol, 2-methyl-2-butanol, 3-methyl-1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, 2-methyl-1-pentanol, 2-methyl-3-pentanol, 2,3-dimethyl-3-pentanol, and 4-methyl-2-pentanol.

Specific examples of the amide-based solvent may include N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, and 1,3-dimethyl-2-imidazolidinone.

Specific examples of the ketone-based solvent may include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 1-hexanone, 2-hexanone, 4-heptanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, methyl ethyl ketone, methyl isobutyl ketone, diacetonyl alcohol, and acetyl carbitol.

Specific examples of the ether-based solvent may include ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, monomethylether, methoxymethyl butanol, diethylether, ethylene glycol monomethylether, propylene glycol monomethylether, propylene glycol monoethylether, diethylene glycol monomethylether, and triethylene glycol monoethylether.

Specific examples of the ester-based solvent may include propylene glycol monomethylether acetate, ethylene glycol monoethylether acetate, diethylene glycol monobutylether acetate, and diethylene glycol monoethylether acetate.

Specific examples of the hydrocarbon-based solvent may include pentane, hexane, octane, and decane.

The amount of the swelling material may be 1 to 99.999 wt %.

Examples of the alkaline material may include primary amines, such as ethylamine and n-propylamine, secondary amines, such as diethylamine, dipropylamine, dibutylamine, diphenylamine, diisopropylamine and di-n-butylamine, tertiary amines, such as triethylamine, tributylamine, tripropylamine, trioctylamine and methyldiethylamine, and quaternary ammonium hydroxides, such as tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide and tetrapentyl ammonium hydroxide.

The amount of the alkaline material may be 0.001 to 2 wt %. If the amount of the alkaline material is less than 0.001 wt %, the effect of trimming the photoresist of the pattern cannot be observed. On the other hand, if the amount thereof exceeds 2 wt %, dimensions in the pattern thickness and spacing may vary due to the excessive trimming effect, and thus the pattern CDU may deteriorate.

The solvent is not particularly limited, so long as it does not dissolve the resist pattern, and a solution including a typical organic solvent may be used. Particularly preferable examples of the solvent may include monohydric alcohols, such as 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-octanol and 4-octanol, and ester-based solvents, such as butyl acetate, amyl acetate, ethyl-3-ethoxypropionate, 3-methoxybutylacetate, 3-methyl-3-methoxybutylacetate, butyl formate, propyl formate, ethyl lactate and butyl lactate.

The amount of the solvent may be 0 to 98.999 wt %.

The surfactant may be any one or a mixture of two or more selected from the group consisting of nonionic surfactants, such as polyoxyethylene alkylethers, polyoxyethylene alkylphenylethers, polyoxyethylene nonylphenylethers, polyoxyethylene octylphenylethers, polyoxyethylene polyoxypropylenes, polyoxyethylene laurylethers, and polyoxyethylene sorbitans.

The surfactant plays a role in decreasing surface tension to thus increase spreadability or penetrability, thus aiding in reducing the LWR of a pattern.

The amount of the surfactant may be 0 to 2 wt %.

When the composition for reducing the LWR of the photoresist pattern is applied to the processing method, it is essential to set an appropriate process and a processing time because the photoresist formed on a normal pattern has to be finely swollen to the level of ones of nm. Although there is a difference depending on the kind of processing solution, when the puddle time is 1 sec or less in the process of reducing the LWR of the photoresist pattern on a 300 mm wafer, the swelling effect is low, and thus there is almost no reduction in LWR. On the other hand, when the puddle time is 90 sec or more, the processing time is increased, and thus the pattern may become excessively large due to excessive swelling, undesirably increasing pattern LWR. Hence, the puddle time is preferably set to the range of less than 60 sec but exceeding 1 sec.

In a typical photoresist patterning process, a photoresist photosensitive to ArF is applied through spin coating at 1500 rpm on a 300 mm silicon wafer using a spin coater, dried (SB: Soft Baking) on a hot plate at 120° C. for 60 sec, exposed using an exposure machine for generating ArF, dried (PEB: Post-Exposure Baking) on a hot plate at 120° C. for 60 sec, and developed (negative tone development) for 30 sec using a negative tone developing solution (butyl acetate).

In the present invention, after the typical photoresist patterning process, the processing solution for reducing the LWR of the photoresist pattern is dispensed at 100 rpm at a speed of 15 mL/s for 10 sec, and puddled for 60 sec, followed by rotating the wafer at 2000 rpm for 20 sec, thereby completing the formation of a photoresist pattern.

As described above, the composition for reducing the LWR of the photoresist pattern and the processing method using the composition enable a small pattern surface to be appropriately swollen and trimmed to thus reduce the LWR, whereby a high processing margin may be provided during subsequent etching or implanting processes, ultimately increasing production yield and thus reducing fabrication costs.

Mode for Invention

A better understanding of the present invention will be given through the following examples and comparative example, in which the examples are set forth merely to illustrate the present invention, but are not to be construed as limiting the scope thereof.

Example 1

A processing solution for reducing the LWR of a photoresist pattern, comprising 80 wt % of 2-propanol, 0.1 wt % of triethylamine and 19.9 wt % of 2-heptanol, was prepared as follows.

2-propanol, triethylamine and 2-heptanol were added, stirred for 6 hr, and passed through a 0.02 μm filter, thus preparing a processing solution for reducing the LWR of a photoresist pattern.

Examples 2 to 10

Respective processing solutions for reducing the LWR of a photoresist pattern were prepared in the same manner as in Example 1 using the components in the amounts shown in Table 1 below.

Comparative Example

Butyl acetate, used as a final cleaning solution for a negative tone development process during the fabrication of a semiconductor device, was provided.

Test Example 1

A photoresist photosensitive to ArF was applied through spin coating on a 300 mm silicon wafer at 1500 rpm using a spin coater, dried (SB: Soft Baking) on a hot plate at 120° C. for sec, exposed using an exposure machine for generating ArF, dried (PEB: Post-Exposure Baking) on a hot plate at 120° C. for 60 sec, and developed (negative tone development) for 30 sec using a negative tone developing solution (butyl acetate). Thereafter, the processing solution of Example 1 was dispensed at 100 rpm at a speed of 15 mL/s for 10 sec and was then puddled for 20 sec, and the wafer was rotated at 2000 rpm for 20 sec, thereby completing the formation of a photoresist pattern. Here, the formed pattern size was 50 nm.

Test Examples 2 to 23

Respective patterns were formed in the same manner as in Test Example 1 using the processing solutions of Examples 1 to 10, except for the puddle time in the pattern formation process.

Comparative Test Examples 1 to 3

Respective patterns were formed in the same manner as in Test Example 1 using butyl acetate of Comparative Example as the processing solution, except for the puddle time in the pattern formation process.

For the silicon wafers having the patterns of Test Examples 1 to 23 and Comparative Test Examples 1 to 3, LWR measurement in holes was not easy, and thus CDU (Critical Dimension Uniformity) was measured, and the extent of reduction of LWR was confirmed. The results are shown in Table 2 below.

Here, the smaller the CDU, the better the LWR.

(1) CDU (Critical Dimension Uniformity)

The difference between the X-axis and the Y-axis of the pattern was measured using a scanning electron microscope (FE-SEM, Hitachi), and thus the values of CDU were confirmed. After treatment, a 45 nm hole pattern was measured in the present test, and in a non-treatment group, the standard deviation of CDU was 4.5 nm. When the standard deviation is less than 4.5 nm and approaches 0, the CDU of the pattern can be deemed to be improved. However, a desired standard deviation of CDU is set to the range of 0.5 nm to 4.0 nm, which is a meaningful numerical range during actual semiconductor fabrication.

TABLE 1 Swelling material Alkaline material Solvent Surfactant Amount Amount Amount Amount Kind (wt %) Kind (wt %) Kind (wt %) Kind (wt %) Example 1 2-propanol 80 Triethylamine 0.1 2-heptanol 19.9 Polyoxyethylene nonylphenylether Example 2 2-propanol 50 Triethylamine 0.1 2-heptanol 49.9 Polyoxyethylene nonylphenylether Example 3 2-propanol 20 Triethylamine 0.1 2-heptanol 79.9 Polyoxyethylene nonylphenylether Example 4 Ethylene 90 Triethylamine 0.1 2-heptanol 9.9 Polyoxyethylene glycol nonylphenylether Example 5 Ethylene 90 Triethylamine 0.1 2-heptanol 9.89 Polyoxyethylene 0.01 glycol nonylphenylether Example 6 Ethylene 90 Triethylamine 0.1 2-heptanol 8.89 Polyoxyethylene 1 glycol nonylphenylether Example 7 Ethylene 90 Triethylamine 2 2-heptanol 8 Polyoxyethylene glycol nonylphenylether Example 8 Ethanol 90 tetramethyl 0.08 1-octanol 9.92 Polyoxyethylene ammonium nonylphenylether hydroxide Example 9 Ethanol 50 tetramethyl 0.08 1-octanol 49.92 Polyoxyethylene ammonium nonylphenylether hydroxide Example 10 Ethanol 10 tetramethyl 0.08 1-octanol 89.92 Polyoxyethylene ammonium nonylphenylether hydroxide Comparative Butyl 100 Example acetate

TABLE 2 CDU Improvement Puddle devia- rate (%) time tion (based on non- Composition (sec) (nm) treatment group) Test Example 1 Example 1 20 4.0 11.1 Test Example 2 Example 1 10 4.1 8.8 Test Example 3 Example 1 60 4.0 11.1 Test Example 4 Example 2 20 3.9 13.3 Test Example 5 Example 2 10 4.0 11.1 Test Example 6 Example 2 60 3.9 13.3 Test Example 7 Example 3 20 3.5 22.2 Test Example 8 Example 3 10 3.6 20.0 Test Example 9 Example 3 60 3.6 20.0 Test Example Example 4 20 3.7 17.8 10 Test Example Example 4 10 3.8 15.6 11 Test Example Example 5 20 3.5 22.2 12 Test Example Example 5 10 3.6 20.0 13 Test Example Example 6 20 3.5 22.2 14 Test Example Example 6 10 3.6 20.0 15 Test Example Example 7 20 3.5 22.2 16 Test Example Example 7 10 3.6 20.0 17 Test Example Example 8 20 3.9 13.3 18 Test Example Example 8 10 4.0 11.1 19 Test Example Example 9 20 3.9 13.3 20 Test Example Example 9 10 3.9 13.3 21 Test Example Example 10 20 3.6 20.0 22 Test Example Example 10 10 3.7 17.8 23 Comparative Comparative Non- 4.5 0.0 Test Example 1 Example treatment group Comparative Comparative 20 4.7 4.4 Test Example 2 Example Comparative Comparative 10 4.7 4.4 Test Example 3 Example

As described above, as the standard deviation of CDU is smaller, the pattern is regarded as increasingly uniform (LWR is reduced). When the CDU deviation is lower, the EL margin and DoF margin are high, thus resulting in a good processing margin.

Based on the test results, upon treatment with processing solution compositions for reducing LWR in the puddle time range of 10 to 20 sec, although there are some differences depending on the amounts of swelling material and alkaline material, CDU can be confirmed to be improved by 11% or more compared to a non-treatment group (Comparative Test Example 1). 

The invention claimed is:
 1. A composition for reducing an LWR (Line Width Roughness) of a negative tone photoresist pattern on a wafer, the composition comprising: 90 wt % of ethylene glycol as a swelling material for swelling the negative tone photoresist pattern on the wafer; 0.1 wt % of triethylamine as an alkaline material for developing an unexposed pattern surface; 8.89 to 9.89 wt % of 2-heptanol as a solvent enabling material dissolution and mixing; and 0.01 to 1 wt % of polyoxyethylene nonylphenylether as a nonionic surfactant.
 2. A method of reducing an LWR (Line Width Roughness) of a negative tone photoresist pattern formed on a wafer by a development process using a negative tone photoresist, the method comprising: 1) dispensing a composition for reducing the LWR on the negative tone photoresist pattern on the wafer; 2) puddling for a predetermined period of time; and 3) spin drying, wherein the composition for reducing the LWR comprises: 90 wt % of ethylene glycol as a swelling material for swelling the negative tone photoresist pattern on the wafer; 0.1 wt % of triethylamine as an alkaline material for developing an unexposed pattern surface; 8.89 to 9.89 wt % of 2-heptanol as a solvent enabling material dissolution and mixing; and 0.01 to 1 wt % of polyoxyethylene nonylphenylether as a nonionic surfactant.
 3. The method of claim 2, wherein the composition is dispensed at a speed of 5 to 50 mL/s and is puddled for 10 to 20 seconds. 